China's gallium oxide advances highlight global semiconductor competition and military tech divergence
Original framing: “Could China’s gallium oxide leap leave US F-22 radar 2 generations behind?” — South China Morning Post
The U.S. dominance in gallium nitride during the late 20th century mirrors its Cold War-era semiconductor leadership, which was driven by military and space programs. China's current push into gallium oxide reflects a similar state-driven innovation strategy, akin to the Japanese and Korean semiconductor booms of the 1980s and 1990s.
China's advancement in gallium oxide semiconductors is not an isolated breakthrough but a symptom of a broader shift in global tech power dynamics.
This shift is driven by state-led innovation strategies, geopolitical competition, and the need for technological self-reliance in the face of export controls. While the U.S. has historically led in gallium nitride, China's state-backed R&D model is now enabling a leap into gallium oxide, echoing earlier semiconductor booms in Japan and South Korea. To avoid a fragmented and ethically unaccountable tech landscape, global cooperation is essential. This includes fostering inclusive innovation, developing circular economies for rare materials, and establishing ethical governance for military applications. By integrating indigenous knowledge, cross-cultural perspectives, and marginalised voices, the global community can ensure that semiconductor advancements serve not only military interests but also broader human and ecological well-being.